CEDM8001 surface mount p-channel enhancement-mode silicon mosfet description: the central semiconductor CEDM8001 is an p-channel enhancement-mode field effect transistor, manufactured by the p-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low theshold voltage. marking code: f features: ? 100mw power dissipation ? 0.4mm low package profile ? low r ds(on) ? low threshold voltage ? logic level compatible ? small, tlp? 1x0.6mm, sot-883l leadless surface mount package applications: ? load/power switches ? dc/dc converters ? battery powered portable equipment maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 10 v continuous drain current (steady state) i d 100 ma continuous drain current i d 200 ma power dissipation p d 100 mw operating and storage junction temperature t j , t stg -65 to +150 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf v gs =10v, v ds =0 1.0 a i gssr v gs =10v, v ds =0 1.0 a i dss v ds =20v, v gs =0 1.0 a bv dss v gs =0, i d =100a 20 v v gs(th) v ds =v gs , i d =250a 0.6 1.1 v r ds(on) v gs =4.0v, i d =10ma 8.0 r ds(on) v gs =2.5v, i d =10ma 12 r ds(on) v gs =1.5v, i d =1.0ma 45 g fs v ds =10v, i d =100ma 100 ms c rss v ds =3.0v, v gs =0, f=1.0mhz 15 pf c iss v ds =3.0v, v gs =0, f=1.0mhz 45 pf c oss v ds =3.0v, v gs =0, f=1.0mhz 15 pf t on v dd =3.0v, v gs =2.5v, i d =10ma 35 ns t off v dd =3.0v, v gs =2.5v, i d =10ma 80 ns sot-883l case r5 (5-august 2010) www.centralsemi.com
CEDM8001 surface mount p-channel enhancement-mode silicon mosfet sot-883l case - mechanical outline lead code: 1) gate 2) source 3) drain marking code: f www.centralsemi.com r5 (5-august 2010)
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